Neoton, 曜輝光電, is a fabless company dedicated to designing and developing GaN device. We adopt different material, structure and layout design to try our best to optimize the characteristics. In addition, by cooperating with strategic partners, we are able to deliver cost-effctive product and to provide total solution to help customer design-in in the shortest possible time.

Gallium Nitride, GaN, is a semiconductor with wide energy band gap which refers to energy required to promote an electron from the valance band to conduction band. Compared with silicon’s band gap of 1.12 eV, GaN’s band gap of 3.4eV indicates that it can sustain higher voltage and temperature, which makes it a promising material for power devices, RF devices, etc.